| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate reclaiming method which can obtain a substrate having a highly flat surface with less polishing amount. <P>SOLUTION: The semiconductor substrate reclaiming method comprises: a first step of selectively removing a first damaged semiconductor region with respect to an undamaged semiconductor region by performing on a semiconductor substrate including the undamaged semiconductor region, the first damaged semiconductor region and a second damaged semiconductor region, etching using a mixed liquid containing a substance oxidizing a semiconductor material composing the semiconductor substrate, a substance dissolving the oxidized semiconductor material and a substance controlling an oxidative rate of the semiconductor material and a solution rate of the oxidized semiconductor material; a second step of removing the second damaged semiconductor region by using an alkaline solution; and a third step of performing polishing processing. <P>COPYRIGHT: (C)2013,JPO&INPIT |
