| 摘要 |
A semiconductor device may be designed in the following manner. A stacked layer of a silicon oxide film and an organic film is provided over a substrate, deuterated water is contained in the organic film, and then a conductive film is formed in contact with the organic film. Next, an inert conductive material that does not easily generate a deuterium ion or a deuterium molecule is selected by measuring the amount of deuterium that exists in the silicon oxide film. |
