| 摘要 |
This invention has: a step for amorphizing the impurity diffusion layer formation region (step 1); a step for doping the impurity diffusion layer formation region in the semiconductor substrate with an impurity (step 2); and a step for applying an annealing treatment, including lamp annealing in which a heating lamp is used and microwave annealing in which microwaves are used, on the semiconductor substrate doped with the impurity, and activating the impurity (step 3). In addition to activation of the impurity, re-crystallization and repairing of crystal defects also take place in step 3. Step 1 is not a requirement. |
