| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency. <P>SOLUTION: A semiconductor light-emitting element according to an embodiment comprises an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including the nitride semiconductor, and a light-emitting layer. The light-emitting layer comprises a barrier layer including a group III element and a well layer laminated with the barrier layer in a direction from the n-type semiconductor layer to the p-type semiconductor layer and including the group III element. If the barrier layer is divided into a first part of the n-type semiconductor layer side and a second part of the p-type semiconductor layer side, an In composition ratio in the group III element of the second part is lower than an In composition ratio in the group III element of the first part. If the well layer is divided into a third part of the n-type semiconductor layer side and a fourth part of the p-type semiconductor layer side, an In composition ratio in the group III element of the fourth part is higher than an In composition ratio in the group III element of the third part. The In composition ratios of the barrier layer and the well layer are a composition ratio in which the energy band diagrams of valence bands of the well layer and the barrier layer become rectangular in a state in which a voltage is applied to the light-emitting layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
