| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory structure in which resetting can be performed by a reset gate and the cross-sectional area of a resistance change film and a lower electrode in the direction in which current flows can be decreased.SOLUTION: A semiconductor device comprises: a first columnar silicon layer 129; a first gate insulating film 162 around the first columnar silicon layer 129; a gate wiring 168b connected to a gate electrode 168a; a second gate insulating film 173 formed around an upper portion of the first columnar silicon layer 129; a first contact 179a around the second gate insulating film 173; a second diffusion layer 143a formed under the first columnar silicon layer 129; a columnar nitride film layer 202 formed on the first columnar silicon layer 129; a film 211 in which resistance changes formed around an upper portion of the columnar nitride film layer 202; a lower electrode 206 which is in a lower portion of the columnar nitride film layer 202 and connected to the film 211 in which resistance changes; and a reset gate insulating film 219 and a reset gate 220a which surround the film 211 in which resistance changes. |
