| 摘要 |
<p>921,845. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. Feb. 21, 1961 [Feb. 25, 1960], No. 6283/61. Class 37. In a method of bonding members of semiconductor devices a semi-conductive member such as a silicon wafer and a metal-surfaced member such as a gold-plated header are held together under pressure and their surface temperatures raised to at least the eutectic temperature of the materials of their contiguous surfaces, but to below the melting points of these materials, while ultrasonic energy is applied to at least one of the members to cause a scrubbing action between them. The bonding may be carried out using the apparatus of Fig. 1 which has an atmosphere-controlled enclosure 10 in which a gold-plated header 12 is supported on a platform 11. This platform is aligned with a movable rod 20 which extends through a cover 24, preferably transparent, and compresses a silicon wafer 21 against the header. A heating current from source 22 is passed through the resistive body of the header by two adjustable electrodes 17, 18, one of which is connected to a source 23 of ultrasonic energy.</p> |
