| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal capable of suppressing twinning effectively. <P>SOLUTION: In production of a β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal by EFG (Edge-defined film-fed growth) method, the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal is grown in a direction parallel to its (101) plane, and an angle ϕ (0°≤ϕ<90°) formed between the <10-1> direction in the (101) plane and the growth direction is <90°. Even in the case of using another crystal growth method such as FZ (Floating Zone) method, twinning of the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal 25 can be suppressed effectively. <P>COPYRIGHT: (C)2013,JPO&INPIT |
