IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

摘要

An image sensor according to the embodiment of the present invention includes a substrate; a photoelectric conversion device which is arranged in the substrate; a first storage region which is separated from the photoelectric conversion device in the substrate; a gate which is arranged on the first storage region; a light shield layer which covers the gate; a dielectric layer which is interposed between the gate and the light shield layer, and is extended from the upper surface of the substrate; an interlayer dielectric structure which covers the light shield layer on the substrate; and a microlens which is located to be overlapped with the photoelectric conversion device on the interlayer dielectric structure. A sidewall of the light shield layer adjacent to a sidewall of the gate has a first thickness vertically extended from the upper surface of the dielectric layer. The first thickness of the light shield layer is thicker than a second thickness of the light shield layer located on the gate.