RADIATION DETECTOR

摘要

According to an embodiment of the present invention, a radiation detector comprises: a common electrode; a thin film transistor (TFT) array; a photoconductor material layer disposed between the common electrode and the TFT array; and a diffusion stop layer disposed between the common electrode and the TFT array on a location corresponding to a connecting portion where the common electrode is connected to a bias voltage supply source, wherein a diffusion stop layer prevents a metal included in the connecting portion from diffusing to the photoconductor material layer.