| 摘要 |
PROBLEM TO BE SOLVED: To provide a static type memory cell which is highly integrated by using a SGT and secures operation stability.SOLUTION: A semiconductor storage device according to the present invention is composed of static type memory cells in which six MOS transistors are arranged on a substrate. Each of the six MOS transistors comprises: first and second NMOS access transistors for accessing a memory; third and fourth NMOS driver transistors for driving a storage node for storing data of the memory cells; and first and second PMOS load transistors for supplying an electric charge for storing the data of the memory cells. In the first and second NMOS access transistors for accessing the memory, a first diffusion layer, a columnar semiconductor layer and a second diffusion layer are arranged hierarchically in a direction perpendicular to the substrate, the columnar semiconductor layer is arranged between the first diffusion layer and the second diffusion layer, and a gate is formed on a side wall of the columnar semiconductor layer. |
