Memory element and memory device

摘要

A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes.

主权项

1. A memory element, comprising a first electrode, a memory layer, and a second electrode in this order, wherein the memory layer includes:
a resistance change layer provided on the first electrode side thereof; and an ion source layer provided on the second electrode side thereof, wherein,
a resistance value of the resistance change layer is configured to change in response to a composition change by means of a voltage applied to the first and second electrodes,a resistance value of the ion source layer is higher than the resistance value of the resistance change layer, andthe ion source layer comprises (a) at least one of metallic elements of copper (Cu), aluminum (Al), germanium (Ge), and zinc (Zn), (b) at least one of zirconium (Zr), titanium (Ti), and tungsten (W), and (c) at least one of oxygen (O), tellurium (Te), sulfur (S), and selenium (Se).