| 发明名称 | Mixed metal-silicon-oxide barriers | ||
| 摘要 | A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 Ångstroms or less is formed on the substrate. | ||
| 申请公布号 | US9263359(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201414191235 | 申请日期 | 2014.02.26 |
| 申请人 | Lotus Applied Technology, LLC | 发明人 | Dickey Eric R.;Danforth Bryan Larson |
| 分类号 | H01L21/00;H01L23/29;H01L23/00;H01L51/52 | 主分类号 | H01L21/00 |
| 代理机构 | Stoel Rives LLP | 代理人 | Stoel Rives LLP |
| 主权项 | 1. A moisture barrier deposited on a substrate, the barrier comprising a thin film of a metal-silicon-oxide mixture formed from a non-hydroxylated silicon-containing precursor and a metal-containing precursor, the barrier being less than 500 Ångstroms thick and having a refractive index of 1.8 or less. | ||
| 地址 | Hillsboro OR US | ||