| 主权项 |
1. A semiconductor device comprising:
a partition in lattice form forming a plurality of housing sections; and a plurality of circuit blocks electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit, wall surface electrodes disposed on wall surfaces of the housing sections respectively and electrically connected to each other between each adjacent pair of housing sections, wherein external shapes of the circuit blocks are square shapes corresponding to unit lattice sizes of the housing sections, the circuit blocks at least includes a semiconductor block and a terminal base block, the semiconductor block includes a semiconductor element, an insulating material covering the semiconductor element, and an electrode connected to the semiconductor element and led out from the insulating material, the terminal base block includes a power terminal to which an external power wiring for supplying electric power to the semiconductor element is electrically connected, and a screw hole into which a screw for fixing the power wiring is inserted, the electrode in the semiconductor block is brought into contact with and electrically connected to the wall surface electrode in a state where the semiconductor block is housed in the housing section, and the power terminal in the terminal base block is brought into contact with and electrically connected to the wall surface electrode in a state where the terminal base block is housed in the housing section. |
