| 发明名称 | Method of severing a semiconductor device composite | ||
| 摘要 | A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser. | ||
| 申请公布号 | US9263334(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201214351975 | 申请日期 | 2012.09.27 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Weiss Guido;Perchtaler Albert |
| 分类号 | H01L21/78;B23K26/38;B23K26/40;H01L33/00;H01L33/38;B23K26/36 | 主分类号 | H01L21/78 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. A method of severing a semiconductor device composite which comprises a carrier having a main surface and a semiconductor layer sequence arranged on the main surface comprising: forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface; applying a second laser cut that only partially severs the carrier along the separating trench; applying a third laser cut that only partially severs the carrier along the separating trench; and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser. | ||
| 地址 | DE | ||