Method for forming a semiconductor device with void-free shallow trench isolation

摘要

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is formed in the semiconductor substrate, and includes an isolation oxide and a spin coating material. The isolation oxide is peripherally enclosed by the semiconductor substrate. The spin coating material is peripherally enclosed by the isolation oxide.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a semiconductor substrate; forming a barrier layer over the semiconductor substrate; forming a trench by etching through the barrier layer and a portion of the semiconductor substrate; partially filling the trench with an isolation oxide, wherein the remaining portion of the trench comprises an opening and an empty space below the opening, and an overhang is formed at a top portion of the trench after the isolation oxide is formed partially filling the trench to shrink the opening; and filling the remaining portion of the trench with a spin coating material.