发明名称 Exposed die clip bond power package
摘要 In an example embodiment, an integrated circuit (IC) comprises a device die having a top-side surface and an under-side surface, the top-side surface having bond pads connected to active circuit elements, the under-side surface having a conductive surface. A first set of lead frame clips having upper portions and lower portions, are solder-anchored, on the upper portions, to a first set of bond pads; the lower portions are flush with the conductive surface. Wires are bonded to an additional set of bond pads opposite the first set of bond pads and to lower lead frame portions of a second set of lead frame clips opposite the first set of lead frame clips; the lower lead frame portions of the second set of lead frame clips are flush with the conductive surface. The device is encapsulated in a molding compound leaving exposed the conductive surface and underside surfaces of the first and second sets of the lead frame portions.
申请公布号 US9263299(B2) 申请公布日期 2016.02.16
申请号 US201414322656 申请日期 2014.07.02
申请人 NXP B.V. 发明人 van Gemert Leonardus Antonius Elisabeth;Israel Emil Casey
分类号 H01L21/00;H01L21/48;H01L23/495;H01L21/56 主分类号 H01L21/00
代理机构 代理人
主权项 1. A method for packaging an integrated circuit (IC) device, the method comprising: mounting a plurality of active device die, into predetermined positions, onto a temporary carrier, each said active device die having bond pads, each of said active device die having a solderable conductive surface on its underside; and having been subjected to back-grinding to a prescribed thickness; dispensing a solder paste onto the bond pads on the plurality active device die; attaching a lead frame to the temporary carrier, the lead frame having an array of device positions which correspond to the predetermined positions of the plurality of active device die, wherein upper lead frame portions contact the solder paste present on the bond pads and lower lead frame portions contact the temporary carrier; and reflowing the solder so that a connection is made between the upper lead frame portions and the bond pads of the plurality of active device die.
地址 Eindhoven NL