发明名称 Photosensitive material and method of photolithography
摘要 Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.
申请公布号 US9261786(B2) 申请公布日期 2016.02.16
申请号 US201213437674 申请日期 2012.04.02
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chang Ching-Yu
分类号 G03F7/00;G03F7/039;G03F7/20;G03F7/26;G03F7/32 主分类号 G03F7/00
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A pattern forming method, comprising: applying a photosensitive material to a substrate, wherein the photosensitive material solubility in negative tone developer decreases upon irradiation and wherein the photosensitive material includes: a polymer backbone chain wherein greater than approximately 50% of the groups linked to the polymer backbone chain are acid labile groups, wherein each of the acid labile groups have the structure: the polymer backbone chain further comprising a plurality of lactone groups linked to the polymer backbone chain; exposing the photosensitive material to a patterned radiation beam; performing a post exposure bake (PEB) process after the exposing the photosensitive material; after the PEB, treating the photosensitive material with a base chemical, wherein the treating causes an opening of each of the plurality of lactone units from the polymer backbone chain to form a respective hydrophilic branch linked to the polymer backbone after contact with the base chemical; and after the treating, applying a developer for developing the photosensitive material, wherein a negative tone developer is applied to the photosensitive material having the opened plurality of lactone units.
地址 Hsin-Chu TW