| 发明名称 | Sample preparation method | ||
| 摘要 | A sample preparation method includes processing a sample by an ion beam to form a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with an electron beam to simultaneously form a deposition film on a front surface of the thin film portion and a deposition film on a rear surface of the thin film portion opposed to the front surface. The electron beam transmits through the thin film portion, generating secondary electrons from both the front and rear surfaces that decompose the deposition gas to form the deposition films. | ||
| 申请公布号 | US9260782(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201313842184 | 申请日期 | 2013.03.15 |
| 申请人 | HITACHI HIGH-TECH SCIENCE CORPORATION | 发明人 | Man Xin;Nakatani Ikuko |
| 分类号 | B05D3/00;C08J7/18;C23C16/48;C23C16/04;H01J37/305 | 主分类号 | B05D3/00 |
| 代理机构 | Adams & Wilks | 代理人 | Adams & Wilks |
| 主权项 | 1. A sample preparation method, comprising: processing a sample piece by an ion beam to form a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with an electron beam to simultaneously form a first deposition film on a first surface of the thin film portion which is an incident side of the electron beam and a second deposition film on a second surface of the thin film portion through which the electron beam has transmitted the thin film portion. | ||
| 地址 | JP | ||