发明名称 MEMS integrated pressure sensor devices and methods of forming same
摘要 A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
申请公布号 US9260296(B2) 申请公布日期 2016.02.16
申请号 US201514713269 申请日期 2015.05.15
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chu Chia-Hua;Cheng Chun-Wen
分类号 H01L29/82;B81B7/04;B81C1/00;B81B3/00;G01C19/56;G01P15/00;G01L19/00;G01L9/00;G01P15/08;G01P15/125;B81B7/00 主分类号 H01L29/82
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A micro-electromechanical (MEMS) device comprising: a polysilicon layer, wherein the polysilicon layer includes: a membrane for a first MEMS device, wherein a first surface of the membrane is exposed to a sealed pressure level of a first cavity; andan electrode for a second MEMS device; a MEMS substrate over the polysilicon layer, wherein the MEMS substrate comprises: a first MEMS structure aligned with the membrane; anda second MEMS structure aligned with the electrode; a cap over the MEMS substrate, wherein the cap comprises a second cavity exposing a second surface of the membrane to an ambient environment; and a third cavity, wherein the electrode is exposed to a sealed pressure level of the third cavity, and wherein the second MEMS structure is disposed within the third cavity.
地址 Hsin-Chu TW