METHOD FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICES AND METHOD FOR FORMING SEMICONDUCTOR DEVICES USING THE SAME

摘要

A method for forming a fine pattern of a semiconductor device is provided. The method comprises: forming a mask film on a lower film, wherein the mask film includes a first mask film on the lower film and a second mask film between the lower film and the first mask film; forming sacrificial patterns on the mask film; forming a connection spacer which fills the space between a pair of adjacent sacrificial patterns, and first spacers which cover one side wall of each of the pair of sacrificial patterns; forming first mask patterns by etching the first mask film by using the first spacers and the connection spacer as etching masks; forming second spacers which cover both side walls of each of the first mask patterns; forming second mask patterns by etching the second mask film by using the second spacers as etching masks; and etching the lower film by using the second mask patterns as etching masks.