| 摘要 |
The purpose of the present invention is to provide a photoresist composition that fully satisfies basic properties such as sensitivity, and has excellent lithographic performance including MEEF, DOF, and LWR. This photoresist composition includes: [A] one or more types of a polymer constituent having, in identical or differing polymers, a structural unit (I) represented by formula (1), and a structural unit (II) that is a structural unit other than the structural unit (I) and includes at least one type of structure selected from the group consisting of cyclic carbonate structures, sultone structures, and lactone structures; and [B] an acid generator. |
