| 摘要 |
The present invention relates to a method for producing an electronic component, in particular a field-effect transistor (FET), comprising at least one substrate, at least one dielectric, and at least one semiconducting metal oxide, wherein the dielectric or a precursor compound thereof based on organically modified silicon oxide compounds, in particular based on silsequioxanes and/or siloxanes, can be processed out of solution, and is thermally treated at a low temperature from room temperature to 350° C., and the semiconductive metal oxide, in particular ZnO or a precursor compound thereof, can also be processed from solution at a low temperature from room temperature to 350° C. |
| 主权项 |
1. A process for producing an electronic component comprising at least one substrate, at least one dielectric and at least one semiconductive metal oxide, comprising the steps of:
(A) singly or repeatedly applying a solution comprising at least one dielectric or a precursor compound thereof based on organically modified silica compounds to the at least one substrate in order to obtain a first coated substrate, wherein the organically modified silica compounds comprise at least one unit selected from the units of the general formulae (I) to (V), and are based on silsesquioxanes and/or siloxanes, where single oxygen bridges are present between the silicon atoms of each unit represented by formulae (I) to (V): where R and R1 may each be defined as follows: R is independently hydrogen; linear or branched, substituted or unsubstituted C1-C20-alkyl, optionally interrupted by at least one heteroatom, at least partly halogenated; linear or branched, substituted or unsubstituted C1-C20-alkyl, optionally interrupted by at least one heteroatom; substituted or unsubstituted C3-C20-cycloalkyl, optionally attached via a linear or branched C1-C20-alkyl chain; linear or branched, substituted or unsubstituted, at least monounsaturated C2-C20-alkenyl, optionally interrupted by at least one heteroatom; linear or branched, substituted or unsubstituted, at least monounsaturated C2-C20-alkynyl, optionally interrupted by at least one heteroatom; substituted or unsubstituted C5-C30-aryl, optionally attached via a linear or branched C1-C20-alkyl chain, R1 is a linear or branched C1-C20-alkylidene, -alkenylidene or -alkynylidene group, which may optionally be interrupted by functional groups including aromatics or heteroaromatics or heteroatoms including O, S, P or N, or substituted or unsubstituted C5-C30-arylene, or singly or repeatedly applying a solution or dispersion comprising at least one semiconductive metal oxide or a precursor compound thereof to the at least one substrate in order to obtain a second coated substrate, then (B) thermally treating the first coated substrate or the second coated substrate from step (A) at a temperature from room temperature to 350° C., in order to obtain a first treated substrate or a second treated substrate, respectively, then (C) if a solution comprising at least one dielectric or a precursor compound thereof based on organically modified silica compounds has been applied in step (A), singly or repeatedly applying a solution or dispersion comprising at least one semiconductive metal oxide or a precursor compound thereof to the first treated substrate from step (B) in order to obtain a first coated treated substrate, or if a solution or dispersion comprising at least one semiconductive metal oxide or a precursor compound has been applied in step (A), singly or repeatedly applying a solution comprising at least one dielectric or a precursor compound thereof based on organically modified silica compounds to the second treated substrate from step (B) in order to obtain a second coated treated substrate, wherein the organically modified silica compounds comprise at least one unit selected from the units of the general formulae (I) to (V), and are based on silsesquioxanes and/or siloxanes, where single oxygen bridges are present between the silicon atoms of each unit represented by formulae (I) to (V): where R and R1 may each be defined as follows: R is independently hydrogen; linear or branched, substituted or unsubstituted C1-C20-alkyl, optionally interrupted by at least one heteroatom, at least partly halogenated; linear or branched, substituted or unsubstituted C1-C20-alkyl, optionally interrupted by at least one heteroatom; substituted or unsubstituted C3-C20-cycloalkyl, optionally attached via a linear or branched C1-C20-alkyl chain; linear or branched, substituted or unsubstituted, at least monounsaturated C2-C20-alkenyl, optionally interrupted by at least one heteroatom; linear or branched, substituted or unsubstituted, at least monounsaturated C2-C20-alkynyl, optionally interrupted by at least one heteroatom; substituted or unsubstituted C5-C30-aryl, optionally attached via a linear or branched C1-C20-alkyl chain, R1 is a linear or branched C1-C20-alkylidene, -alkenylidene or -alkynylidene group, which may optionally be interrupted by functional groups including aromatics or heteroaromatics or heteroatoms including O, S, P or N, or substituted or unsubstituted C5-C30-arylene, and then (D) thermally treating the first coated treated substrate or the second coated treated substrate from step (C) at a temperature from room temperature to 350° C. |
