| 发明名称 |
Semiconductor process for modifying shape of recess |
| 摘要 |
A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface. |
| 申请公布号 |
US9263579(B2) |
申请公布日期 |
2016.02.16 |
| 申请号 |
US201514723447 |
申请日期 |
2015.05.27 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chang Ming-Hua;Wu Chun-Yuan;Chien Chin-Cheng;Yu Tien-Wei;Lin Yu-Shu;Lai Szu-Hao |
| 分类号 |
H01L29/78;H01L21/02;H01L21/30;H01L29/66;H01L29/165;H01L21/306;H01L21/324;H01L29/08;H01L29/161 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor process, comprising:
forming a gate on a substrate; forming a recess in the substrate beside the gate; forming a seeding layer covering on the recess; after forming the seeding layer, performing a surface modification process on the recess by importing at least a depositing gas and at least an etching gas; and forming an epitaxial structure in the recess. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
