| 发明名称 | Semiconductor device and radio communication device | ||
| 摘要 | A radio communication device includes a power amplifier having a semiconductor device formed with a plurality of unit transistors. Base electrodes of the unit transistors are connected with each other by a base line, and an input capacitor is connected to the base line such that the input capacitor is commonly and electrically connected to the base electrodes of a plurality of the unit transistors. | ||
| 申请公布号 | US9263559(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201414469674 | 申请日期 | 2014.08.27 |
| 申请人 | Murata Manufacturing Co., Ltd. | 发明人 | Sasaki Satoshi;Umemoto Yasunari;Osone Yasuo;Kobori Tsutomu;Kusano Chushiro;Ohbu Isao;Sasaki Kenji |
| 分类号 | H01L25/04;H01L29/73;H01L23/66;H01L23/00;H01L27/06;H01L29/737;H01L49/02;H01L29/08 | 主分类号 | H01L25/04 |
| 代理机构 | Robert Mlotkowski Safran & Cole, P.C. | 代理人 | Montone Gregory E.;Robert Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A radio communication device comprising a power amplifier, wherein said power amplifier is comprised of a semiconductor device including a plurality of unit transistors, wherein base electrodes of the unit transistors are connected with each other by a base line, and wherein an input capacitor is connected to the base line such that the input capacitor is commonly and electrically connected to the base electrodes of a plurality of the unit transistors. | ||
| 地址 | Kyoto JP | ||