Silicon carbide semiconductor device and manufacturing method thereof

摘要

The present invention includes an n+ type substrate, a drift epitaxial layer formed on the n+ type substrate and having a lower concentration of impurity than the n+ type substrate, a Schottky electrode formed on the drift epitaxial layer, and a PI formed as an insulating film by covering at least an end of the Schottky electrode and an end and a side surface of the drift epitaxial layer.

主权项

1. A method of manufacturing a silicon carbide semiconductor device, comprising:
a step (a) of forming an epitaxial layer having a lower concentration of impurity than a silicon carbide semiconductor substrate, on the silicon carbide semiconductor substrate; a step (b) of forming a plurality of electrodes on said epitaxial layer; a step (c) of forming a groove, by a dicing operation before mechanical breaking to divide the silicon carbide semiconductor substrate, deeper than a lower surface of said epitaxial layer, on said epitaxial layer sandwiched by each of said electrodes; a step (d) of forming an insulating film by covering at least an end of said electrodes, and covering an end and exposed side surface of said epitaxial layer such that a portion of the insulating film extends into the groove; and a step (e) of dividing said silicon carbide semiconductor substrate at a portion in which said groove is formed, wherein the insulating film covers a bottom surface of the groove and said step (e) is a step of dividing said silicon carbide semiconductor substrate by the mechanical breaking, in the absence of dicing, through both the insulating layer and the silicon carbide semiconductor substrate.