Integrated circuit devices including finFETs and methods of forming the same

摘要

Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a fin protruding from an upper surface of the semiconductor substrate in a first direction, the fin extending in a second direction that is perpendicular to the first direction; an isolation layer on the upper surface of the semiconductor substrate and on a sidewall of a portion of the fin that is adjacent the upper surface of the semiconductor substrate; a gate line crossing the fin; a first recess region in a portion of the fin that is exposed by the gate line, wherein the first recess region has a first width as its maximum width in the second direction, and wherein a lowermost surface of the first recess region is at a level higher than an upper surface of the isolation layer relative to the upper surface of the semiconductor substrate; a second recess region in the portion of the fin that is exposed by the gate line and connected to a lower portion of the first recess region, wherein the second recess region has a second width as its maximum width in the second direction, and the second width is different from the first width; and a source/drain region in the first and second recess regions.