主权项 |
1. A method of operating a semiconductor device, the method comprising:
providing a protection device at a protected node, the protected node being coupled to circuitry in a semiconductor substrate, wherein the protected node is coupled to an anode of a SCR device, the SCR comprising:
a plurality of p-type first anode regions coupled to an n-type n-base region,a plurality of hybrid regions coupled to the n-type n-base region, the hybrid regions comprising a p-type second anode region and an n-type trigger region,a p-type p-base region coupled to the n-type n-base region, andan n-type cathode region coupled to the p-type p-base region, wherein
the plurality of hybrid regions are sparsely distributed among the first anode regions, andthe first anode regions are coupled to the second anode regions; and protecting the circuitry from a high voltage, wherein when the high voltage reaches a level that is greater than an operating level, current flows from a trigger device coupled to the n-type trigger region in the SCR device, wherein when the current flows from the trigger device into the n-type trigger region of the SCR, the SCR latches, causing a high current to flow from the anode regions of the of the SCR device to the cathode region of the SCR device. |