发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
According to one embodiment, a semiconductor device includes a first loop and a second loop. A folded-back portion is a portion formed by stretching out the first loop from a first bond in a first direction and then folding it back in a second direction. The folded-back portion is in a shape in which it is squashed against the first bond. The second loop is bonded to the folded-back portion. An end of the second loop is located at a second position. The second position is offset in a direction in which the first loop extends, from a first position. The first position is the center of the first bond of the first loop. |
申请公布号 |
US9263418(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414484474 |
申请日期 |
2014.09.12 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Kasuya Nobutaka;Saijo Junichi |
分类号 |
H01L21/44;H01L23/00;H01L29/40 |
主分类号 |
H01L21/44 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A manufacturing method of a semiconductor device comprising:
passing out wire to stretch in a first direction from a first bond formed on a first electrode and then folding back the wire in a second direction different from the first direction; pressing down the folded-back wire against the first bond to form a folded-back portion in a shape in which it is squashed; bonding the wire passed out to stretch from the folded-back portion, to a connection of a substrate so as to form a first loop linking the connection and the first bond; and bonding wire passed out to stretch from a second bond formed on a second electrode, to the folded-back portion so as to form a second loop linking the first bond and the second bond, wherein in forming the second loop, an end of the wire is bonded to the first loop at a second position offset in a direction in which the first loop extends, from a first position that is the center of the first bond. |
地址 |
Minato-ku JP |