发明名称 Semiconductor device and manufacturing method thereof
摘要 According to one embodiment, a semiconductor device includes a first loop and a second loop. A folded-back portion is a portion formed by stretching out the first loop from a first bond in a first direction and then folding it back in a second direction. The folded-back portion is in a shape in which it is squashed against the first bond. The second loop is bonded to the folded-back portion. An end of the second loop is located at a second position. The second position is offset in a direction in which the first loop extends, from a first position. The first position is the center of the first bond of the first loop.
申请公布号 US9263418(B2) 申请公布日期 2016.02.16
申请号 US201414484474 申请日期 2014.09.12
申请人 Kabushiki Kaisha Toshiba 发明人 Kasuya Nobutaka;Saijo Junichi
分类号 H01L21/44;H01L23/00;H01L29/40 主分类号 H01L21/44
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A manufacturing method of a semiconductor device comprising: passing out wire to stretch in a first direction from a first bond formed on a first electrode and then folding back the wire in a second direction different from the first direction; pressing down the folded-back wire against the first bond to form a folded-back portion in a shape in which it is squashed; bonding the wire passed out to stretch from the folded-back portion, to a connection of a substrate so as to form a first loop linking the connection and the first bond; and bonding wire passed out to stretch from a second bond formed on a second electrode, to the folded-back portion so as to form a second loop linking the first bond and the second bond, wherein in forming the second loop, an end of the wire is bonded to the first loop at a second position offset in a direction in which the first loop extends, from a first position that is the center of the first bond.
地址 Minato-ku JP