发明名称 Assembly to selectively etch at inkjet printhead
摘要 An assembly for selectively etching an inkjet printhead includes a substrate and printhead layers formed on the substrate. A bonding region can provide a location on the printhead layers for an electrical bond. An ink channeling region can be defined at least in part by the printhead layers. A mask layer can partially cover the printhead layers and include a first opening positioned over the bonding region and a second opening positioned over the ink channeling region. The assembly can also include a via at the first opening and a trench at the second opening having greater depth than the via.
申请公布号 US9259932(B2) 申请公布日期 2016.02.16
申请号 US201113117745 申请日期 2011.05.27
申请人 Hewlett-Packard Development Company, L.P. 发明人 White Lawrence H.;Vina Robel;Homeijer Sara Jensen;Mcmahon Terry
分类号 B44C1/22;B41J2/16 主分类号 B44C1/22
代理机构 Thorpe North & Western LP 代理人 Thorpe North & Western LP
主权项 1. A method of manufacturing an inkjet printhead, comprising: forming a plurality of printhead layers on a substrate to provide a bonding region and an ink channeling region; applying a mask layer over the plurality of printhead layers, the mask layer including a first opening over the bonding region and a second opening over the ink channeling region; andetching the bonding region and the ink channeling region through the openings so that a via is formed at the bonding region and multiple layers of the plurality of printhead layers are etched through the second opening to form a trench at the ink channeling region and so that the trench has a depth that is greater than the via, wherein etching the bonding region and the ink channeling region further comprises:etching a passivation layer through the openings in the bonding region and the ink channeling region using a first combination of etchant materials at a first pressure and a first power level;etching an etching retardant layer in the bonding region and a dielectric layer in the plurality of layers in the ink channeling region using a second combination of etchant materials at a second pressure and a second power level; andcontinuing etching the dielectric layer using a third combination of etchant materials at the second pressure and the second power level.
地址 Houston TX US