| 发明名称 |
Chemical mechanical polishing layer formulation with conditioning tolerance |
| 摘要 |
A chemical mechanical polishing pad is provided containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition exhibits an acid number of ≧0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance of ≧80%. |
| 申请公布号 |
US9259821(B2) |
申请公布日期 |
2016.02.16 |
| 申请号 |
US201414314327 |
申请日期 |
2014.06.25 |
| 申请人 |
Rohm and Haas Electronic Materials CMP Holdings, Inc.;Dow Global Technologies LLC |
发明人 |
Qian Bainian;DeGroot Marty W.;Sonnenschein Mark F. |
| 分类号 |
B24B37/24;B24B37/20;H01L21/306;G02B1/12;H01F41/00 |
主分类号 |
B24B37/24 |
| 代理机构 |
|
代理人 |
Deibert Thomas S. |
| 主权项 |
1. A chemical mechanical polishing pad, comprising:
a polyurethane polishing layer having a composition and a polishing surface; wherein the composition is the reaction product of ingredients, comprising:
(a) a polyfunctional isocyanate;(b) a curative system, comprising:
(i) a carboxylic acid containing polyfunctional curative having an average of at least two active hydrogens and at least one carboxylic acid functional group per molecule, wherein the at least one carboxylic acid functional group survives the reaction to form the composition; and,(c) optionally, a plurality of microelements;wherein the composition exhibits an acid number of ≧0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance of ≧80%. |
| 地址 |
Newark DE |
