III nitride semiconductor light emitting device and method for manufacturing the same

摘要

A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of AlxGa1-xN (0≦x≦0.05) on a second surface of the III nitride semiconductor laminate. The second surface is opposite to a first surface on the light extraction side.

主权项

1. A III nitride semiconductor light emitting device comprising:
a III nitride semiconductor laminate including a light emitting layer, and a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer having a conductivity type different from the first conductivity type, the light emitting layer being sandwiched between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a first electrode and a second electrode formed on the first conductivity-type semiconductor layer side and the second conductivity-type semiconductor layer side of the III nitride semiconductor laminate, respectively, wherein
a composite layer having a reflective electrode portion and a contact portion made of AlxGa1-xN (0≦x≦0.05) is provided on a second surface of the III nitride semiconductor laminate, the second surface being opposite to a first surface on the light extraction side,the contact portion is thicker than the reflective electrode portion,the second electrode is located at the second surface side, and directly contacts the reflective electrode portion and the contact portion, andthe reflective electrode portion and the contact portion are located directly on the second surface.