| 发明名称 | Plasmonic light emitting diode | ||
| 摘要 | A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure. | ||
| 申请公布号 | US9263637(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US200913145995 | 申请日期 | 2009.01.30 |
| 申请人 | Hewlett Packard Enterprise Development LP | 发明人 | Tan Michael R. T.;Fattal David A.;Fiorentino Marco;Wang Shih-Yuan |
| 分类号 | H01L33/00;H01L33/20;H01L33/02;H01L33/04;H01L33/38 | 主分类号 | H01L33/00 |
| 代理机构 | Patent Law Office of David Millers | 代理人 | Patent Law Office of David Millers |
| 主权项 | 1. A light emitting diode comprising: a diode structure containing a quantum well; an enhancement layer that supports plasmon oscillations at a first frequency, wherein the plasmon oscillations having the first frequency couple to photons produced by combination of electrons and holes in the quantum well; and a barrier layer and a patterned contact between the enhancement layer and the quantum well, wherein the barrier layer and the patterned contact block diffusion between the enhancement layer and the diode structure and wherein at least the barrier layer allows the plasmon oscillations of the enhancement layer to interact with the quantum well. | ||
| 地址 | Houston TX US | ||