Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity

摘要

The present disclosure provides one embodiment of an extreme ultraviolet (EUV) mask. The EUV mask includes a first state and a second state different from each other; a first main polygon and a second main polygon adjacent to the first main polygon; a plurality of sub-resolution assist polygons; and a field. Each of the first and second main polygons, the sub-resolution assist polygons, and the field has an associated state. The state assigned to the first main polygon is different from the state assigned to the second main polygon. The plurality of assist polygons are assigned a same state, which is different from a state assigned to the field.

主权项

1. A mask for extreme ultraviolet lithography (EUVL), comprising:
a first state and a second state different from each other; a first main polygon and a second main polygon adjacent to the first main polygon; a plurality of sub-resolution assist polygons; and a field, wherein each of the first and second main polygons, the sub-resolution assist polygons, and the field has an associated state, wherein the state assigned to the first main polygon is different from the state assigned to the second main polygon, and wherein the plurality of assist polygons are assigned a same state, which is different from a state assigned to the field.