Thin film transistor

摘要

A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.

主权项

1. A method of making a thin film transistor, the method comprising:
forming a gate electrode on an insulating substrate; forming an insulating layer on the gate electrode; forming an HSQ gel layer on the insulating layer; pre-baking the HSQ gel layer to form a HSQ pre-layer; forming a semiconductor layer on the HSQ pre-layer; baking the HSQ pre-layer to form a transition layer after forming the semiconductor layer, wherein a plurality of Si atoms of the transition layer is bonded with atoms of the insulating layer and atoms of the semiconductor layer; and forming a source electrode and a drain electrode spaced from each other and located on the transition layer.