Method for manufacturing a magnetic tunnel junction device

摘要

The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

主权项

1. A manufacturing method of a magnetic tunnel junction device, comprising:
providing a first magnetic layer including an amorphizing element; providing an insulating layer on the first magnetic layer; providing a second magnetic layer including an amorphizing element on the insulating layer; providing an in-plane magnetic layer with in-plane magnetic anisotropy between the second magnetic layer and the insulating layer; providing a seed layer for inducing the formation of crystalline structure; and on the second magnetic layer; and crystallizing the first and second magnetic layers by annealing on the first magnetic layer, the insulating layer, and the second magnetic layer, wherein in the crystallizing of the first and second magnetic layers, the first and second magnetic layers have perpendicular anisotropy, and wherein at least one of the first and second magnetic layers has a compound having a chemical formula of (Fe100-xPdx)100-yBy or (Fe100-xPtx)100-yBy, B is a metal, and the seed layer for inducing the formation of crystalline structure is made at least one of Pd, Pt, Au, or Fe and has a (100) texture.