发明名称 Light-emitting diode (LED) for achieving an asymmetric light output
摘要 A light emitting diode (LED) for achieving an asymmetric light output includes a multilayered structure comprising a p-n junction, where at least one layer of the multilayered structure comprises a surface configured to provide a peak emission in a direction away from a normal to a mounting surface, the surface being a top or bottom surface of the layer.
申请公布号 US9263636(B2) 申请公布日期 2016.02.16
申请号 US201113100786 申请日期 2011.05.04
申请人 Cree, Inc. 发明人 Tarsa Eric J.;Lowes Theodore D.;Keller Bernd P.
分类号 H01L33/20;H01L23/00 主分类号 H01L33/20
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A light emitting diode (LED) for achieving an asymmetric light output therefrom, the LED comprising: a multilayered structure comprising epitaxial layers and a transparent substrate, the epitaxial layers comprising a p-n junction, where the transparent substrate comprises a wedge shape consisting of: an external top surface of the LED from which light is emitted, a bottom surface, and four side surfaces separating the external top surface from the bottom surface, the external top surface not being in contact with the bottom surface, the external surface being a planar surface oriented nonparallel to the p-n junction so as to provide a peak emission in a direction away from a normal to a mounting surface, the external top surface and the bottom surface being nonparallel to each other, and the side surfaces being oriented substantially perpendicular to the p-n junction, wherein the transparent substrate does not comprise a secondary optical element attached thereto, wherein the multilayered structure comprises a phosphor layer thereon, the phosphor layer conformally covering the external top surface, and wherein the LED comprises an asymmetric light emission profile.
地址 Durham NC US