发明名称 High definition heater and method of operation
摘要 An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.
申请公布号 US9263305(B2) 申请公布日期 2016.02.16
申请号 US201213599648 申请日期 2012.08.30
申请人 Watlow Electric Manufacturing Company 发明人 Ptasienski Kevin;Smith Kevin Robert;Swanson Cal Thomas;Schmidt Philip Steven;Nosrati Mohammad;Lindley Jacob Robert;Boldt Allen Norman;Zhang Sanhong;Steinhauser Louis P.;Grimard Dennis Stanley
分类号 F27B5/14;H05B3/28;H01L21/67;H05B3/20;H05B1/02;H05B1/00;H05B3/02;H01L21/683 主分类号 F27B5/14
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A heater comprising: a base plate; a base heater secured to the base plate, the base heater comprising at least one zone; a substrate secured to the base heater; a tuning heater secured to the substrate opposite the base heater, the tuning heater comprising a plurality of zones that is greater in number than the zones of the base heater, and the tuning heater providing lower power than the base heater; and a chuck secured to the tuning heater opposite the substrate, wherein the substrate defines a thermal conductivity to dissipate power from the base heater.
地址 St. Louis MO US