发明名称 |
High definition heater and method of operation |
摘要 |
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer. |
申请公布号 |
US9263305(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201213599648 |
申请日期 |
2012.08.30 |
申请人 |
Watlow Electric Manufacturing Company |
发明人 |
Ptasienski Kevin;Smith Kevin Robert;Swanson Cal Thomas;Schmidt Philip Steven;Nosrati Mohammad;Lindley Jacob Robert;Boldt Allen Norman;Zhang Sanhong;Steinhauser Louis P.;Grimard Dennis Stanley |
分类号 |
F27B5/14;H05B3/28;H01L21/67;H05B3/20;H05B1/02;H05B1/00;H05B3/02;H01L21/683 |
主分类号 |
F27B5/14 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A heater comprising:
a base plate; a base heater secured to the base plate, the base heater comprising at least one zone; a substrate secured to the base heater; a tuning heater secured to the substrate opposite the base heater, the tuning heater comprising a plurality of zones that is greater in number than the zones of the base heater, and the tuning heater providing lower power than the base heater; and a chuck secured to the tuning heater opposite the substrate, wherein the substrate defines a thermal conductivity to dissipate power from the base heater. |
地址 |
St. Louis MO US |