发明名称 X-RAY DETECTOR
摘要 Disclosed is an X-ray detector. The X-ray detector may comprise: a thin film transistor (TFT) unit; and a capacitor unit. The capacitor unit may be formed in a structure having a multi-storage capacitor. Electron-hole pairs may be generated by X-rays radiated to a photoconductive material layer through an upper electrode, and the generated electrons may be stored in the multi-storage capacitor. A storage capacitor may be formed between a common electrode and a storage electrode, and between the common electrode and a collection electrode, respectively.
申请公布号 KR20160017490(A) 申请公布日期 2016.02.16
申请号 KR20140101102 申请日期 2014.08.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JAE CHUL;KIM, SUN IL;LEE, DONG WOOK;LEE, CHANG BUM
分类号 G01T1/24;G01N23/02;H01L21/66 主分类号 G01T1/24
代理机构 代理人
主权项
地址