发明名称 |
X-RAY DETECTOR |
摘要 |
Disclosed is an X-ray detector. The X-ray detector may comprise: a thin film transistor (TFT) unit; and a capacitor unit. The capacitor unit may be formed in a structure having a multi-storage capacitor. Electron-hole pairs may be generated by X-rays radiated to a photoconductive material layer through an upper electrode, and the generated electrons may be stored in the multi-storage capacitor. A storage capacitor may be formed between a common electrode and a storage electrode, and between the common electrode and a collection electrode, respectively. |
申请公布号 |
KR20160017490(A) |
申请公布日期 |
2016.02.16 |
申请号 |
KR20140101102 |
申请日期 |
2014.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JAE CHUL;KIM, SUN IL;LEE, DONG WOOK;LEE, CHANG BUM |
分类号 |
G01T1/24;G01N23/02;H01L21/66 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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