| 摘要 |
The invention provides a laser processing method for a wafer and a laser processing device, modification layers along spacing channels can be formed in the interior of the wafer without enlargement of spacing channel width, or sticking of a cutting band on the surface of the wafer. Through the laser processing method for a wafer, the modification layers are formed along the spacing channels in the interior of the wafer, the wafer is provided with a plurality of spacing channels in a grid shape on the surface and devices in a plurality of regions divided by the plurality of spacing channels, the laser processing method for a wafer comprises: a wafer supporting process, wherein, the back surface of the wafer is sticked to the cutting band installed in an annular frame; and a modification layer forming process, wherein, laser light with the wavelength with transmission relative to the cutting band and the wafer positions a light-focusing point from the cutting band to the interior of the wafer and illuminates along the spacing channels, so that the modification layers can be formed along the spacing channels in the interior of the wafer. |
