| 发明名称 | Semiconductor device, manufacturing method thereof, and display apparatus | ||
| 摘要 | Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees. | ||
| 申请公布号 | US9263470(B1) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201414585525 | 申请日期 | 2014.12.30 |
| 申请人 | SAMSUNG DISPLAY CO., LTD. | 发明人 | Kim Dongjo;Cha Myounggeun;Khang Yoonho;Koo Soyoung |
| 分类号 | H01L21/00;H01L27/12;H01L29/786;H01L21/02;H01L27/32 | 主分类号 | H01L21/00 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A semiconductor device, comprising: a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer on the buffer layer; a gate electrode that is on the crystalline silicon layer and insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, an angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees, wherein a slope of an upper surface of the crystalline silicon layer that overlaps with the inclined surface in a plan view is smaller than a slope of the inclined surface. | ||
| 地址 | Yongin, Gyeonggi-Do KR | ||