发明名称 Methods of producing strain in a semiconductor waveguide and related devices
摘要 Quasi-phase matched (QPM), semiconductor photonic waveguides include periodically-poled alternating first and second sections. The first sections exhibit a high degree of optical coupling (abbreviated “X2”), while the second sections have a low X2. The alternating first and second sections may comprise high-strain and low-strain sections made of different material states (such as crystalline and amorphous material states) that exhibit high and low X2 properties when formed on a particular substrate, and/or strained corrugated sections of different widths. The QPM semiconductor waveguides may be implemented as silicon-on-insulator (SOI), or germanium-on-silicon structures compatible with standard CMOS processes, or as silicon-on-sapphire (SOS) structures.
申请公布号 US9261647(B1) 申请公布日期 2016.02.16
申请号 US201314012877 申请日期 2013.08.28
申请人 Sandia Corporation 发明人 Cox Johathan Albert;Rakich Peter Thomas
分类号 G02B6/12;G02B6/10 主分类号 G02B6/12
代理机构 代理人 Finston Martin I.
主权项 1. A phase matched strained semiconductor waveguide that exhibits second order effects, comprising: a semiconductor waveguide body having a plurality of periodically alternating, strained first sections and second sections, wherein: said strained first sections have a high optical mode coupling coefficient and comprise a crystalline semiconductor material, said second sections have a non-reversed but lower optical mode coupling coefficient relative to the strained first sections, and a period of said first and second sections is a multiple of an inverse of a difference between a pump wavevector and a sum of signal and idler wavevectors in the waveguide.
地址 Albuquerque NM US