Semiconductor light emitting device and method for manufacturing same

摘要

According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.

主权项

1. A method for manufacturing a semiconductor light emitting device, the method comprising:
forming a barrier layer on an n-type layer with a gas comprising a group III raw material gas and a group V raw material gas, by forming a first portion layer serving as a portion of the barrier layer and forming a second portion layer on the first portion layer, the second portion layer serving as another portion of the barrier layer and comprising an n-type impurity with a concentration higher than an n-type impurity concentration in the first portion layer; and forming a well layer on the barrier layer with a gas comprising a group III raw material gas and group V raw material gas, by forming a third portion layer serving as a portion of the well layer and forming a fourth portion layer on the third portion layer, the fourth portion layer serving as another portion of the well layer and comprising the n-type impurity with a concentration higher than an n-type impurity concentration in the third portion layer, wherein the device comprises the n-type layer comprising a nitride semiconductor, a p-type layer comprising a nitride semiconductor, and a stacked structure between the n-type layer and the p-type layer, the stacked structure comprises a plurality of barrier layers comprising the barrier layer, and a plurality of well layers comprising the well layer, the barrier layers comprise a nitride semiconductor, each of the well layers is between barrier layers, each of the well layers has a bandgap energy smaller than a bandgap energy of the barrier layers, and each of the well layers comprises a nitride semiconductor.