Integrated finFET-BJT replacement metal gate

摘要

A method of forming a semiconductor structure that includes forming a first recess and a second recess between a first pair of sidewall spacers and a second pair of sidewall spacers respectively, the first and second pair of sidewall spacers surrounding a fin on top of a buried dielectric layer, the fin is formed from a top most semiconductor layer of a semiconductor-on-insulator substrate. A high-k dielectric layer is deposited within the first and second recesses and a dummy titanium nitride layer is deposited on the high-k dielectric layer. The high-k dielectric layer and the dummy titanium nitride layer are removed from the second recess and a silicon cap layer is deposited within the first and second recesses. Next, dopants are implanted into the silicon cap layer in the second recess without implanting dopants into the silicon cap layer in the first recess to form a BJT device.

主权项

1. A method of forming a semiconductor structure, comprising:
forming a first recess and a second recess between a first pair of sidewall spacers and a second pair of sidewall spacers respectively, the first pair of sidewall spacers and the second pair of sidewall spacers surrounding a fin on top of a buried dielectric layer, the fin formed from a top most semiconductor layer of a semiconductor-on-insulator substrate, and the fin extending outwardly from a gate structure formed over the buried dielectric layer; depositing a high-k dielectric layer within the first recess and within the second recess; depositing a dummy titanium nitride layer on the high-k dielectric layer; removing the high-k dielectric layer and the dummy titanium nitride layer from the second recess without removing the high-k dielectric and dummy titanium nitride layers from the first recess; depositing a silicon cap layer to fill the first recess and the second recess, the silicon cap layer being formed above the high-k dielectric layer and dummy titanium nitride layer in the first recess; and implanting dopants into the silicon cap layer in the second recess without implanting dopants into the silicon cap layer in the first recess to form a bipolar junction transistor (BJT) device.