Methods of forming isolated channel regions for a FinFET semiconductor device and the resulting device

摘要

One method disclosed includes, among other things, forming a fin structure comprised of a semiconductor material, a first epi semiconductor material and a second epi semiconductor material, forming a sacrificial gate structure above the fin structure, forming a sidewall spacer adjacent the sacrificial gate structure, performing at least one etching process to remove the portions of the fin structure positioned laterally outside of the sidewall spacer so as to thereby define a fin cavity in the source/drain regions of the device and to expose edges of the fin structure positioned under the sidewall spacer, and performing an epitaxial deposition process to form an epi etch stop layer on the exposed edges of the fin structure positioned under the sidewall spacer and within the fin cavity.

主权项

1. A method of forming a FinFET device comprised of source/drain regions, the method comprising:
forming a fin structure comprised of a semiconductor material, a first epi semiconductor material positioned on and vertically above said semiconductor material and a second epi semiconductor material positioned on and vertically above said first epi semiconductor material; forming a sacrificial gate structure above said fin structure; after forming said sacrificial gate structure, forming a sidewall spacer adjacent said sacrificial gate structure; performing at least one etching process to remove the portions of said fin structure positioned laterally outside of said sidewall spacer so as to thereby define a fin cavity in the source/drain regions of said device and to expose edges of the fin structure positioned under said sidewall spacer; and performing an epitaxial deposition process to form an epi etch stop layer on the exposed edges of said fin structure positioned under said sidewall spacer and within said fin cavity.