| 发明名称 | Semiconductor component | ||
| 摘要 | A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3). | ||
| 申请公布号 | US9263526(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201214110952 | 申请日期 | 2012.03.29 |
| 申请人 | Friedrich-Alexander-Universität Erlangen-Nürnberg | 发明人 | Weber Heiko B.;Krieger Michael;Hertel Stefan;Krach Florian;Jobst Johannes;Waldmann Daniel |
| 分类号 | H01L29/06;H01L29/16;H01L29/45;H01L29/78;H01L29/04;H01L29/167;H01L29/36 | 主分类号 | H01L29/06 |
| 代理机构 | Mendelsohn Dunleavy, P.C. | 代理人 | Mendelsohn Dunleavy, P.C. ;Mendelsohn Steve |
| 主权项 | 1. A semiconductor component having a semiconductor substrate comprising at least one of a crystalline silicon carbide and a multicrystalline silicon carbide and having separate electrodes applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene on silicon carbide, in such a way that a current channel is formed between the electrodes through the semiconductor substrate. | ||
| 地址 | Erlangen DE | ||