| 发明名称 | Line width roughness improvement with noble gas plasma | ||
| 摘要 | A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a photoresist mask, ionizing the UV producing gas to produce UV rays to irradiate the photoresist mask, and etching the lines into the etch layer through the photoresist mask. | ||
| 申请公布号 | US9263284(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201414279114 | 申请日期 | 2014.05.15 |
| 申请人 | Lam Research Corporation | 发明人 | Cheng Shih-Yuan;Liu Shenjian;Hong Youn Gi;Fu Qian |
| 分类号 | H01L21/3065;H01L21/308;H01L21/027;H01L21/311;H01L21/67 | 主分类号 | H01L21/3065 |
| 代理机构 | Beyer Law Group LLP | 代理人 | Beyer Law Group LLP |
| 主权项 | 1. A method for forming lines in an etch layer on a substrate, comprising: placing the substrate into a vacuum chamber; forming a photoresist mask having a plurality of patterned lines over the etch layer; providing a high-intensity vacuum ultra-violet (VUV) producing gas comprising argon gas into the vacuum chamber; ionizing the argon gas to produce VUV rays to irradiate the photoresist mask; and etching the lines into the etch layer through the photoresist mask. | ||
| 地址 | Fremont CA US | ||