Method for selective growth of highly doped group IV—Sn semiconductor materials

摘要

Disclosed are methods for selective deposition of doped Group IV-Sn materials. In some embodiments, the method includes providing a patterned substrate comprising at least a first region and a second region, where the first region includes an exposed first semiconductor material and the second region includes an exposed insulator material, and performing at least two cycles of a grow-etch cyclic process. Each cycle includes depositing a doped Group IV-Tin (Sn) layer, where depositing the doped Group IV-Sn layer includes providing a Group IV precursor, a Sn precursor, and a dopant precursor, and using an etch gas to etch back the deposited doped Group IV-Sn layer.

主权项

1. A method comprising:
providing a patterned substrate comprising at least a first region and a second region, wherein the first region comprises an exposed first semiconductor material and the second region comprises an exposed insulator material; and performing at least two cycles of a grow-etch cyclic process, wherein each cycle comprises:
(i) depositing a doped Group IV-Tin (Sn) layer, wherein a Sn concentration throughout the doped Group IV-Sn layer is at least about 5 at %, wherein depositing the doped Group IV-Sn layer comprises providing a Group IV precursor, a Sn precursor, and a dopant precursor, and(ii) using an etch gas to etch back the deposited doped Group IV-Sn layer.