发明名称 |
Reflective lithography masks and systems and methods |
摘要 |
Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed. |
申请公布号 |
US9261792(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414341443 |
申请日期 |
2014.07.25 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Chien-Hsuan;Wang Jen-Pan |
分类号 |
G03F7/20;G03F1/52;G03F1/24 |
主分类号 |
G03F7/20 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A system comprising:
a first radiation source; and a first lithography mask comprising a first non-planar reflective surface and a first reticle pattern, the first lithography mask being configured to reflect radiation off of the first non-planar reflective surface in a first pattern of radiation to a substrate, the radiation being from the first radiation source, the first pattern of radiation corresponding to the first reticle pattern. |
地址 |
Hsin-Chu TW |