发明名称 Light-transmitting conductive film, display device, electronic device, and manufacturing method of light-transmitting conductive film
摘要 An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.
申请公布号 US9260779(B2) 申请公布日期 2016.02.16
申请号 US201012781894 申请日期 2010.05.18
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Koezuka Junichi;Maruyama Tetsunori;Saito Takayuki;Imoto Yuki;Uto Noriaki;Endo Yuta;Shionoya Hitomi;Hirohashi Takuya;Yamazaki Shunpei
分类号 C23C14/08;C23C14/34;C23C14/06;C23C14/58;C23C14/54 主分类号 C23C14/08
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A manufacturing method of a light-transmitting conductive film, comprising: forming a light-transmitting conductive film on an insulating layer by a sputtering method in an atmosphere including a rare gas; and performing heat treatment on the light-transmitting conductive film, wherein the light-transmitting conductive film is electrically connected to one of a source electrode and a drain electrode of a transistor through an opening in the insulating layer, wherein the light-transmitting conductive film comprises conductive oxynitride including zinc and aluminum, wherein the sputtering method is carried out using a target including zinc oxide and aluminum over which a chip of aluminum nitride is set, and wherein an amount of aluminum included in the chip of aluminum nitride is larger than an amount of aluminum included in the target including the zinc oxide and the aluminum.
地址 Atsugi-shi, Kanagawa-ken JP