| 摘要 |
The semiconductor device includes a power transistor that is disposed between a first signal line, which is coupled to a first external terminal, and a second signal line, which is coupled to a second external terminal. A gate electrode of the power transistor is coupled to a third signal line. The semiconductor device further includes a clamp circuit that clamps a voltage between the first signal line and the third signal line, a first resistive element that is disposed between the third signal line and the second signal line, and a monitoring section that monitors a voltage between the third signal line and the second signal line. The clamp circuit is configured so that a clamp voltage can be changed. The monitoring section exercises control to decrease the clamp voltage when the voltage between the third signal line and the second signal line exceeds a predefined threshold value. |
